Evidence map›Paper›PMID 41340332›Full record

ArticleSmall methods2026

Gate-Assisted Programmable Molecular Doping of Epitaxial Graphene Devices.

Yijing Liu, DaVonne Henry, Taylor Terrones, Alexis J Demirjian, Alexey Suslov, Valery Ortiz Jimenez, Ngoc Thanh Mai Tran, Curt A Richter, Albert F Rigosi, Amy Y Liu and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Small methods, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Yijing LiuDepartment of Physics, Georgetown University, Washington, DC, 20057, USA.ORCID https://orcid.org/0000-0002-0608-8344
DaVonne HenryDepartment of Physics, Georgetown University, Washington, DC, 20057, USA.ORCID https://orcid.org/0009-0006-9203-7768
Taylor TerronesDepartment of Materials and Metallurgical Engineering, New Mexico Tech, Socorro, NM, 87801, USA.
Alexis J DemirjianDepartment of Physics, Georgetown University, Washington, DC, 20057, USA.ORCID https://orcid.org/0000-0002-6491-8860
Alexey SuslovNational High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.
Valery Ortiz JimenezPhysical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
Ngoc Thanh Mai TranPhysical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
Curt A RichterPhysical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
Albert F RigosiPhysical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.ORCID https://orcid.org/0000-0002-8189-3829
Amy Y LiuDepartment of Physics, Georgetown University, Washington, DC, 20057, USA.ORCID https://orcid.org/0000-0002-2011-1854
Nikolai G KaluginDepartment of Materials and Metallurgical Engineering, New Mexico Tech, Socorro, NM, 87801, USA.ORCID https://orcid.org/0000-0002-3115-8615
Paola BarbaraDepartment of Physics, Georgetown University, Washington, DC, 20057, USA.ORCID https://orcid.org/0000-0003-4151-262X

Funding

National Science Foundation NSF/DMR-1644779National Science Foundation NSF/DMR-2104755National Science Foundation NSF/DMR-2104770National Science Foundation NSF/DMR-2128556National Science Foundation NSF/OSI-2329006
6 · The paper itself

Abstract

Since the discovery of graphene, control of its carrier density via doping or functionalization has been a crucial need. Despite significant progress, precise control of the carrier density for epitaxial graphene on SiC remains a challenge. Multiple cycles of doping and characterization are often required before achieving a desired carrier density. In this work, a new approach is demonstrated to precisely program the doping level in top-gated epitaxial graphene devices that are exposed to nitric acid vapor before the gate deposition. With the help of an applied gate voltage, the modification of carrier concentration introduced by the nitric acid can be reversibly controlled, while the corresponding carrier density at zero gate voltage can be accurately tuned by more than 4 × 10

Indexed as

functionalizationgraphenemolecular dopingNO2

Identifiers

PMID41340332
PMCPMC12893241

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.