ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Al Nanoparticle-Decorated Metal Oxide Synaptic Transistors for Ultralow-Energy Neuromorphic Computing with Wide Dynamic Range.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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Who cites it
1 citing paper in PubMed.
- Al Nanoparticle-Decorated Metal Oxide Synaptic Transistors for Ultralow-Energy Neuromorphic Computing with Wide Dynamic Range.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
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5 authors.
Funding
Abstract
Achieving ultralow energy consumption alongside high synaptic fidelity remains a key challenge in the development of practical and scalable neuromorphic hardware systems. Electrolyte-gated memtransistors (EGMTs), which enable low-voltage analog switching via electric double layer modulation, suffer from a fundamental trade-off between dynamic range and energy consumption. Here, a nanoparticle-engineered EGMT is reported that mitigates this limitation by incorporating aluminum nanoparticles at the interface between a solution-processed indium gallium zinc oxide channel and a solid polymer electrolyte composed of polyethylene oxide doped with lithium hexafluoroarsenate. This design yields 50 discrete conductance states at a drain voltage of 1 mV, achieving a dynamic range exceeding 78 and a synaptic switching energy of 0.62 pJ spike
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