ArticleScience advances2025
Bias-controlled multistate spintronics with giant TMR and polarity switch via localized spin states in 2D half-metals.
Article in Science advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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9 authors.
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Abstract
The relentless downscaling of integrated circuit systems imposes critical demands on spintronic technologies, particularly requiring superior storage density and efficient tunability beyond conventional magnetic-field approaches. A notable challenge persists in realizing multistate spintronic devices with electrical control at nanoscale. Here, we propose a breakthrough strategy for achieving bias-controlled giant tunneling magnetoresistance (TMR) for multistate memory applications. Our design uses two-dimensional (2D) half-metals hosting strongly localized spin states (LSSs) at the Fermi level as two ferromagnet layers in magnetic tunnel junctions (MTJs). Multiple memory states emerge from bias-driven alignment/misalignment of LSSs on two sides, generating sudden tunneling pathway changes and distinguishable TMR. First-principles quantum transport simulations on MTJs based on 2D VCl
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