ArticleNature communications2025
Monolithic electro-optic platform on silicon with bandwidth of 100 GHz and beyond.
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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13 authors.
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Abstract
Extending electro-optic bandwidth of native silicon photonic devices well beyond 100 GHz remains a challenge. We demonstrate a scalable C-band silicon photonic platform monolithically integrating ultra-high speed germanium-silicon electro absorption modulators and fin photodiodes. We apply a delta-layer doping process to incorporate Si into Ge. Two electro-absorption modulator variants with lengths of 40 µm and 20 µm exhibit electro optic 3-dB bandwidths of 100 GHz and well beyond 110 GHz, respectively. Co-integrated GeSi-fin photodiodes achieve 3-dB bandwidths of more than 200 GHz. Involving only platform integrated absorption modulators and fin photodiodes, we demonstrate open-eyes in a large signal experiment at 140 Gbit/s. This work establishes an important milestone for next generation optical communication technology.
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