Localized Electric Field Tailoring to Balance Voltage Reliability, Current Density, and High-Frequency Performance of AlGaN/GaN HEMTs.

Yuxin Wang, Jiangwen Wang, Zilong Dong, Peiran Tian, Yuxiu Liu, Junyi Zhai, Weiguo Hu

Abstract read

In one paragraph

Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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0 citing papers in PubMed.

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4 · The record

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5 · Who and what money

Authors and funding

7 authors.

Yuxin WangBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China.

Jiangwen WangBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China.

Zilong DongBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China.ORCID 0009-0003-8134-8964

Peiran TianBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China.

Yuxiu LiuBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China.

Junyi ZhaiBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China.ORCID 0000-0001-8900-4638

Weiguo HuBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China.

Funding

National Natural Science Foundation of China 52173298 and 52192611

6 · The paper itself

Abstract

Emerging applications including advanced industrial manufacturing, cutting-edge scientific research and medical equipment demand AlGaN/GaN HEMTs possessing both high-frequency and high-voltage characteristics. However, a persistent trade-off remains between the frequency characteristics and breakdown characteristics of these devices. In this study, we employed localized electric field tailoring (LEFT) by introducing materials with different dielectric constants to construct a non-uniform composite gate dielectric layer, aiming to balance the breakdown voltage and cut-off frequency of the device. Device models were developed using APSYS-2018 software and their reliability was experimentally validated. Research data indicates that, compared to traditional uniform high-k (typically with dielectric constants k > 10, such as HfO

Indexed as

AlGaN/GaN HEMTbreakdown voltagecut-off frequencynon-uniform composite gate dielectrictechnology computer aided design

Identifiers

PMID41302718

DOI10.3390/mi16111199

PMCPMC12654403

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.