Evidence map›Paper›PMID 41298455›Full record

ArticleNature communications2025

Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors.

Chengyuan Xue, Congwei Tan, Xin Gao, Junchuan Tang, Weiyu Sun, Yuling Yin, Mengdi Wang, Xiaoyin Gao, Hao An, Boyang Fu and 5 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. KNature communications · 2026
    Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Chengyuan Xue *Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Congwei Tan *Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.ORCID http://orcid.org/0000-0002-6701-2773
Xin Gao *Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.ORCID http://orcid.org/0009-0005-3999-0106
Junchuan Tang *Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Weiyu SunCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Yuling YinSuzhou Laboratory, Suzhou, China.
Mengdi WangCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Xiaoyin GaoCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Hao AnSchool of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, South Korea.
Boyang FuCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Wanqing LiuCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Yuteng WangCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Ye LiCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Feng DingSuzhou Laboratory, Suzhou, China.
Hailin PengCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China. hlpeng@pku.edu.cn.ORCID http://orcid.org/0000-0003-1569-0238

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Gate-all-around (GAA) nanosheet field-effect transistors (FETs) with two-dimensional (2D) semiconductor channels surrounded by high-κ dielectrics show outstanding performance and hold promise for ultimate miniaturization in the post-Moore era. However, the synthesis of uniform wafer-scale 2D GAA nanosheet single crystals on industry-compatible substrates presents a considerable challenge. Herein, we report wafer-scale uniform growth of 2D high-κ oxide/semiconductor/high-κ oxide GAA single crystals on r-plane sapphire via buffered van der Waals (vdW) epitaxy. The 2D GAA heterostructures possess atomically flat interfaces, exhibiting superb uniformity and crystallinity across the wafer. Furthermore, the 2D GAA heterostructures can be transferred to diverse substrates owing to the vdW gap within the buffer oxide, leaving a reusable wafer. FETs based on 2D GAA heterostructures demonstrate exceptional performance with on/off ratio and optimal carrier mobility of > 10⁶ and 227 cm² V⁻¹ s⁻¹, respectively. The transferable wafer-scale 2D GAA heterostructures provide promising avenues for the fabrication of monolithic three-dimensional integrated circuits and extending Moore's law beyond the limitations of silicon.

Identifiers

PMID41298455
PMCPMC12658098

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