ArticleNature communications2025
High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems.
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
5 citing papers in PubMed.
- Barrier-Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoSAdvanced materials (Deerfield Beach, Fla.) · 2026Article
- Large-area two-dimensional MoONature communications · 2026Article
- Gate dielectric stack design for 2D materials-based electronics.Nano convergence · 2026Review
- Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors.Nature communications · 2026Review
- Atomically sharp heteroepitaxial HfNature communications · 2026Article
Corrections and comments
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Authors and funding
7 authors.
Funding
Abstract
The integration of high-κ dielectrics with two-dimensional (2D) semiconductors has long been limited by the low reactivity of their dangling-bond-free surfaces and the scalability issues of conventional deposition techniques. Here, we report a universal van der Waals (vdW) integration strategy using HfSe
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.