Evidence map›Paper›PMID 41277077›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2026

Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs

Seng Huat Lee, Takumi Iwaya, Kosuke Nakayama, Ting Yong Lim, Lujin Min, Jingyang He, Yu Wang, Venkatraman Gopalan, Zhijian Xie, Xing-Chen Pan and 7 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Disorder Driven Anisotropic Nonlinear Hall Effect in the Kagome Metal YbCoAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Seng Huat Lee2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA.ORCID https://orcid.org/0000-0003-4254-3460
Takumi IwayaDepartment of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.
Kosuke NakayamaDepartment of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.
Ting Yong LimDepartment of Electrical and Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan.
Lujin MinDepartment of Physics, The Pennsylvania State University, University Park, PA, 16802, USA.
Jingyang HeDepartment of Physics, The Pennsylvania State University, University Park, PA, 16802, USA.
Yu Wang2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA.
Venkatraman GopalanDepartment of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
Zhijian XieDepartment of Electrical and Computer Engineering, North Carolina Agriculture and Technical State University, Greensboro, NC, 27411, USA.
Xing-Chen PanAdvanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, 980-8577, Japan.
Yong P ChenAdvanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, 980-8577, Japan.
Tay-Rong ChangDepartment of Electrical and Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan.
Hsin LinInstitute of Physics, Academia Sinica, Taipei, 115201, Taiwan.
Liang FuDepartment of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Kouji SegawaDepartment of Physics, Kyoto Sangyo University, Kyoto, 603-8555, Japan.
Takafumi SatoDepartment of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.ORCID https://orcid.org/0000-0002-4544-5463
Zhiqiang Mao2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA.ORCID https://orcid.org/0000-0002-4920-3293

Funding

Basic Energy Sciences DE-SC0012375JST-CREST JPMJCR18T1National Science and Technology Council (NSTC) NSTC113-2124-M-006-009-MY3National Science and Technology Council (NSTC) NSTC114-2112-M-001-055-MY3National Science and Technology Council (NSTC) NSTC114-2628-M-006-005-MY3National Science Foundation DMR 2211327NSF Cooperative Agreement DMR-2039351
6 · The paper itself

Abstract

The nonlinear Hall effect (NLHE) with time-reversal symmetry has emerged as a transformative phenomenon within the Hall effect family, attracting significant interest due to its profound implications for both fundamental physics and technological applications. While prior studies have predominantly focused on NLHE in 2D materials, advancements in practical applications have been constrained by low operating temperatures and limited responsivity, typically below 10

Indexed as

CdGeAs2frequency mixingnonlinear hall effectsemiconductor

Identifiers

PMID41277077
PMCPMC12862720

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.