Evidence map›Paper›PMID 41276950›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Small and Simple Molecular Structure Based Thermally Stable Ruthenium Precursor in Advancing Ruthenium ALD Process for Scaled Interconnect Metallization.

Hideaki Nakatsubo, Debananda Mohapatra, Eun-Soo Lee, Jeongha Kim, Iaan Cho, Masato Iseki, Toshiyuki Shigetomi, Ryosuke Harada, Sang-Woong Na, Taehoon Cheon and 2 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Hideaki NakatsuboGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Debananda MohapatraGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.ORCID https://orcid.org/0000-0002-3272-0489
Eun-Soo LeeDepartment of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulju-gun, Ulsan, 44919, Republic of Korea.
Jeongha KimGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Iaan ChoDepartment of Chemical Engineering, Hongik University, Mapo-gu, Seoul, 04066, Republic of Korea.
Masato IsekiChemical Materials Development Department, TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd., Tsukuba, Ibaraki, 3004247, Japan.
Toshiyuki ShigetomiChemical Materials Development Department, TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd., Tsukuba, Ibaraki, 3004247, Japan.
Ryosuke HaradaChemical Materials Development Department, TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd., Tsukuba, Ibaraki, 3004247, Japan.
Sang-Woong NaMaterials R&D Center, TaeguTec LTD., Daegu, 42936, Republic of Korea.
Taehoon CheonR&D Center, CTH Corporation, Daegu, 43018, Republic of Korea.
Bonggeun ShongDepartment of Chemical Engineering, Hongik University, Mapo-gu, Seoul, 04066, Republic of Korea.
Soo-Hyun KimGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.ORCID https://orcid.org/0000-0003-3748-2755

Funding

Ministry of Trade, Industry & Energy (MOTIE, Korea) RS-2024-00420281Ministry of Trade, Industry & Energy (MOTIE, Korea) RS-2025-02311098Technology Innovation Program (Public-private joint investment semiconductor R&D program (K-CHIPS) to foster high-quality human resources RS-2023-00236667
6 · The paper itself

Abstract

Ruthenium (Ru) via atomic layer deposition (ALD) has emerged as a promising alternative to copper-interconnects. For the first time, a small yet simple molecular structure Ru precursor, [Ru(trimethylenemethane (TMM))(p-cymene)], with excellent thermal stability up to 400 °C is introduced that enables a high-temperature ALD-Ru process with a high growth per cycle of ≈1.28 Å cycle

Indexed as

advanced interconnectsbulk‐like resistivityhigh growth per cycle (GPC)high thermal stabilitynovel Ru precursorRu atomic layer deposition (ALD‐Ru)selectivity

Identifiers

PMID41276950
PMCPMC12884743

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.