ArticleSmall methods2026
Cryogenic-Assisted Hydrogen Fluoride Surface Reactions Enabling Reversibly Ultra-High Selectivity of Atomic Layer Etching Between SiO
Article in Small methods, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
1 citing paper in PubMed.
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
5 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Atomic-level precision processes are increasingly essential for advanced semiconductor devices with highly-complicated small features. Plasma-enhanced atomic layer etching (ALE) is considered as a promising technique to meet requirements of material diversity and highly selective processing. Here, the ALE processes of SiO
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Registered trials
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