Evidence map›Paper›PMID 41271868›Full record

ArticleScientific reports2025

Straintronic and spintronic properties of MnO₂/SiC Van der Waals heterostructure: a DFT study.

Amir Zelati, Jabbar Khodadadi, Halkawt Abdalqadir Kh Ahmed, Rusul Mohsin Moharib Alsarray, Sarkut Ibrahim Mahmood, Khatereh Sarvazad, Farzad Ahmadian, Maliheh Amiri, Arash Boochani, Arash Yari

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Article in Scientific reports, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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10 authors.

Amir ZelatiDepartment of Basic Sciences, Birjand University of Technology, Birjand, Iran.
Jabbar KhodadadiDepartment of Physics, Razi University, Kermanshah, Iran.
Halkawt Abdalqadir Kh AhmedDepartment of Electrical Techniques, Chamchamal Technical Institute, Sulaimani Polytechnic University, Sulaymaniyah, Iraq.
Rusul Mohsin Moharib AlsarrayDepartment of Statistics, Middle Technical University, Baghdad, Iraq.
Sarkut Ibrahim MahmoodDepartment of Electrical Techniques, Chamchamal Technical Institute, Sulaimani Polytechnic University, Sulaymaniyah, Iraq.
Khatereh SarvazadDepartment of Physics, Arv.C., Islamic Azad University, Abadan, Iran.
Farzad AhmadianDepartment of Physics, Shah.C, Islamic Azad University, Shahreza, Iran.
Maliheh AmiriDepartment of Physics, Ker.C, Islamic Azad University, Kermanshah, Iran.
Arash BoochaniDepartment of Physics, Ker.C, Islamic Azad University, Kermanshah, Iran. arash_bch@iau.ac.ir.
Arash YariDepartment of Physics, Ker.C, Islamic Azad University, Kermanshah, Iran.

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6 · The paper itself

Abstract

Strain engineering of 2D heterostructures is pivotal for next-generation flexible electronics. Here, we investigate the straintronic and spintronic properties of MnO₂/SiC van der Waals heterostructures (vdWHs) using density functional theory (DFT). Our results reveal: (i) a strain-induced transition from Type-I to Type-II band alignment, (ii) emergence of topological signatures under tensile strain, and (iii) enhanced visible-light absorption. The MnO₂/SiC vdWH, with its intrinsic ferromagnetism (4.85 µB) and strain-tunable multitronic responses, offers a unique platform for spintronic and optoelectronic applications unattainable in conventional TMD-based systems.

Indexed as

BandalignmentDFTMnO2/SiC hetrostructureMultitronics

Identifiers

PMID41271868
PMCPMC12638789

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