Evidence map›Paper›PMID 41255862›Full record

ArticleRSC advances2025

Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window.

Ankang Xiao, Luyu Zhao, Ying Yang, Cai Jin, Xiaoqin Yang, Lili Ma, Feifei Tian, Wei Hu, Zengli Huang, Hong Gu

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in RSC advances, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Ankang XiaoInformation Materials Research Department, Suzhou Laboratory Suzhou 215123 China guh@szlab.ac.cn.ORCID https://orcid.org/0009-0007-3162-2151
Luyu ZhaoInformation Materials Research Department, Suzhou Laboratory Suzhou 215123 China guh@szlab.ac.cn.
Ying YangInformation Materials Research Department, Suzhou Laboratory Suzhou 215123 China guh@szlab.ac.cn.
Cai JinInformation Materials Research Department, Suzhou Laboratory Suzhou 215123 China guh@szlab.ac.cn.
Xiaoqin YangInformation Materials Research Department, Suzhou Laboratory Suzhou 215123 China guh@szlab.ac.cn.
Lili MaInformation Materials Research Department, Suzhou Laboratory Suzhou 215123 China guh@szlab.ac.cn.
Feifei TianTesting and Analysis Platform, Suzhou Institute of Nano-technology and Nano-Bionics Suzhou 215123 China.
Wei HuKey Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University Chongqing 400044 China.ORCID https://orcid.org/0000-0002-9914-7162
Zengli HuangInformation Materials Research Department, Suzhou Laboratory Suzhou 215123 China guh@szlab.ac.cn.
Hong GuInformation Materials Research Department, Suzhou Laboratory Suzhou 215123 China guh@szlab.ac.cn.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Aluminum nitride (AlN) films were deposited on W/Ti/SiO

Identifiers

PMID41255862
PMCPMC12621219

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.