Evidence map›Paper›PMID 41247341›Full record

ArticleACS nano2025

Bi

Chi-Chun Cheng, Hsing-Chien Chien, Tai-Ting Lee, Yuen-Chih Chen, Huynh-Uyen-Phuong Nguyen, Sun-Zen Chen, Yung-Chang Lin, Kazu Suenaga, Chang-Hong Shen, Yu-Lun Chueh and 3 more

Abstract read
In one paragraph

Article in ACS nano, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Chi-Chun ChengDepartment of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.ORCID 0009-0002-9570-9858
Hsing-Chien ChienCollege of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan.
Tai-Ting LeeInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
Yuen-Chih ChenDepartment of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Huynh-Uyen-Phuong NguyenCollege of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan.
Sun-Zen ChenCenter for Nanotechnology, Materials Science and Microsystems, National Tsing Hua University, Hsinchu 30013, Taiwan.
Yung-Chang LinResearch Institute of Core Technology for Materials Innovation, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.ORCID 0000-0002-3968-7239
Kazu SuenagaThe Institute of Scientific and Industrial Research (SANKEN), The University of Osaka, Osaka 567-0047, Japan.
Chang-Hong ShenCollege of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan.
Yu-Lun ChuehDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.ORCID 0000-0002-0155-9987
Yen-Fu LinDepartment of Physics, National Chung Hsing University, Taichung 40227, Taiwan.
Mei-Yin ChouInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
Po-Wen ChiuDepartment of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.ORCID 0000-0003-4909-0310

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The continuous scaling of conventional floating-gate memories faces major challenges due to charge leakage and complex multilayer architectures. Here, we report a monolithic nonvolatile memory (NVM) device constructed using a single 2D material, Bi

Indexed as

2D memoryBi2O2Selow-power devicemonolithic nonvolatile memoryprocess simplification

Identifiers

PMID41247341
PMCPMC12676734

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.