Evidence map›Paper›PMID 41243247›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Device to Circuit Co-Design Utilizing High-Performance PEALD Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems.

Wenhui Wang, Tao Zhang, Zelin Yuan, Haoran Peng, Jun Lan, Zhixiong Li, Yongle Wu, Xuewei Feng, Longyang Lin, Feichi Zhou and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Wenhui WangSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.ORCID https://orcid.org/0000-0002-0571-0912
Tao ZhangSchool of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China.
Zelin YuanSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
Haoran PengSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
Jun LanSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
Zhixiong LiSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
Yongle WuSchool of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China.
Xuewei FengSchool of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
Longyang LinSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
Feichi ZhouSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
Panpan ZhangSchool of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China.
Yida LiSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.ORCID https://orcid.org/0000-0002-5675-582X

Funding

Guangdong Provincial Department of Education Innovation Team Program 2021KCXTD012National Key Laboratory of Integrated Circuits and Microsystems NICL2024KF2004National Key Research and Development Project of China 2023YFB2806300National Natural Science Foundation of China 52273246National Natural Science Foundation of China 62174074National Natural Science Foundation of China 62274081National Natural Science Foundation of China W2532048Shenzhen Fundamental Research Program JCYJ20220530115014032Shenzhen Fundamental Research Program JCYJ20220530115204009Young Innovative Talent Project Research Program 2021KQNCX077Zhujiang Young Talent Program 2021QN02X362
6 · The paper itself

Abstract

The development of oxide semiconductor devices for monolithic 3D (M3D) integration has largely remained at the device level, limiting progress toward large-scale applications. To advance this technology, evaluation from device to circuit level-akin to CMOS-is essential. This work presents a comprehensive study of M3D-compatible technology using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) fabricated via plasma-enhanced atomic layer deposition (PEALD). The investigation spans material characterization, device performance, technology computer-aided design (TCAD) Modeling, circuit design, and scaling projections. At device level, comprehensive material and electrical characterizations elucidate intrinsic property interdependencies in IGZO TFTs, which exhibit a field-effect mobility (µ

Indexed as

device to circuit co‐designindium‐gallium‐zinc oxideoxide circuittechnology computer‐aided design Modelingtechnology node scalingthin‐film transistor

Identifiers

PMID41243247
PMCPMC12866809

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.