Evidence map›Paper›PMID 41219283›Full record

ArticleScientific reports2025

Programming pulse width dependent charge retention characteristics of low-power synaptic thin film transistors.

Danyoung Cha, Jeongseok Pi, Sungsik Lee

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Scientific reports, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Danyoung ChaThe Semiconductor-Specialized University, Pusan National University, Busan, 46241, Republic of Korea. wdwn9277@pusan.ac.kr.
Jeongseok PiThe Department of Electronics Engineering, Pusan National University, Busan, 46241, Republic of Korea.
Sungsik LeeThe Department of Electronics Engineering, Pusan National University, Busan, 46241, Republic of Korea. sungsiklee@pusan.ac.kr.

Funding

Korea Institute for Advancement of Technology(KIAT) grant funded by the Korea Government(MOTIE) RS-2025-02214408, HRD Program for Industrial Innovation
6 · The paper itself

Abstract

A study on a programming-pulse width dependent synaptic characteristics of a sub-threshold operating hafnium doped zinc oxide (Hf-ZnO) thin-film transistor (TFT) is presented. For this, the static and pulsed characteristics of fabricated Hf-ZnO TFTs need to be monitored, respectively. Here, to achieve the memory capability (e.g. electron trapping and de-trapping) of this Hf-ZnO TFT, trap states in defective gate oxides, such as Al

Indexed as

Amorphous oxide semiconductorLow power consumptionRetention characteristicsSynaptic deviceWeight-update characteristics

Identifiers

PMID41219283
PMCPMC12606289

What OpenQuestion holds

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LicenceCC BY-NC-ND
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.