ArticleACS omega2025
Controlling Band-Bending for Perovskite Optoelectronic Devices Using Bismuth-Based Interlayers.
Article in ACS omega, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Authors and funding
8 authors.
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Abstract
Interface engineering is a powerful tool for enhancing electron/hole transfer and extraction, as well as reducing charge carrier recombination in perovskite-based optoelectronic devices, including light-emitting diodes (LEDs) and photovoltaic (PV) devices. Here, incorporating an interlayer between the perovskite and charge transport layers has been an extremely successful approach to fine-tune energy level alignment, boosting device performance. In this work, we investigate the incorporation of bismuth-based perovskitoids as interlayers to deepen the position of the perovskite's conduction band. Our results clearly show that perovskite solar cells based on a PIN architecture with a triple-cation composition (TC) incorporating the bismuth-based interlayer outperform those without when using C
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