Evidence map›Paper›PMID 41198683›Full record

ArticleNature communications2025

Hole-doping-assisted epitaxial growth of wafer-scale rhombohedral-stacked bilayer transition-metal dichalcogenides single crystals.

Hang Sun, Zhu Du, Yanan Peng, Xiaohui Li, Qiang Wan, Ling Huang, Luying Song, Ziyi Han, Ruihan Xu, Yinuo Li and 8 more

Abstract read
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
  2. Article
  3. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Hang Sun *The Institute for Advanced Studies, Wuhan University, Wuhan, China.
Zhu Du *The Institute for Advanced Studies, Wuhan University, Wuhan, China.
Yanan PengThe Institute for Advanced Studies, Wuhan University, Wuhan, China.
Xiaohui LiThe Institute for Advanced Studies, Wuhan University, Wuhan, China.
Qiang WanThe Institute for Advanced Studies, Wuhan University, Wuhan, China.
Ling HuangThe Institute for Advanced Studies, Wuhan University, Wuhan, China.
Luying SongThe Institute for Advanced Studies, Wuhan University, Wuhan, China.
Ziyi HanSchool of Materials Science and Engineering, Peking University, Beijing, China.
Ruihan XuThe Institute for Advanced Studies, Wuhan University, Wuhan, China.
Yinuo LiThe Institute for Advanced Studies, Wuhan University, Wuhan, China.
Yuhang LiThe Institute for Advanced Studies, Wuhan University, Wuhan, China.
Yulin JiangThe Institute for Advanced Studies, Wuhan University, Wuhan, China.
Xiaoxu ZhaoSchool of Materials Science and Engineering, Peking University, Beijing, China.ORCID http://orcid.org/0000-0001-9746-3770
Nan XuThe Institute for Advanced Studies, Wuhan University, Wuhan, China.ORCID http://orcid.org/0000-0001-6739-3468
Lei LiaoCollege of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.ORCID http://orcid.org/0000-0003-1325-2410
Congxin XiaSchool of Materials Science and Engineering, Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, Henan Normal University, Xinxiang, China. xiacongxin@htu.edu.cn.ORCID http://orcid.org/0000-0003-1915-4264
Jianping ShiThe Institute for Advanced Studies, Wuhan University, Wuhan, China. jianpingshi@whu.edu.cn.ORCID http://orcid.org/0000-0002-7709-6405
Jun HeKey Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China. he-jun@whu.edu.cn.ORCID http://orcid.org/0000-0002-5998-5225

Funding

National Natural Science Foundation of China (National Science Foundation of China) 62134001National Natural Science Foundation of China (National Science Foundation of China) 92164103National Natural Science Foundation of China (National Science Foundation of China) 92464303National Natural Science Foundation of China (National Science Foundation of China) U23A20364National Natural Science Foundation of China (National Science Foundation of China) U24A2055Natural Science Foundation of Hubei Province (Hubei Provincial Natural Science Foundation) 2024AFA052
6 · The paper itself

Abstract

Bilayer rhombohedral-stacked transition-metal dichalcogenides (3R-TMDCs) combining high carrier mobility, good electrostatic control, and exotic switchable polarization are emerging as promising semiconducting channels for beyond-silicon electronics. However, despite great efforts, the growth of wafer-scale bilayer 3R-TMDCs single crystals remains difficult due to challenges in the synergistic control of phase structure and grain orientation. Here we design a hole-doping-assisted strategy to synthesize a series of two-inch bilayer 3R-TMDCs single crystals on c-plane sapphire. The introduction of hole dopants (e.g. Hf, V, Nb, Ta) not only increases the interlayer coupling to break the formation energy degeneracy of bilayer 3R-stacked and hexagonal-stacked TMDCs, but also promotes the parallel steps formation on sapphire surfaces to induce the unidirectionally aligned bilayer grain nucleation. The fabricated ferroelectric semiconductor field-effect transistors based on bilayer Hf-MoS

Identifiers

PMID41198683
PMCPMC12592520

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.