Evidence map›Paper›PMID 41196478›Full record

ReviewNano convergence2025

Recent advances in ferroelectric materials, devices, and in-memory computing applications.

Hwiho Hwang, Sangwook Youn, Hyungjin Kim

Abstract readReview
PubMed Full text at PMC Publisher
In one paragraph

Review in Nano convergence, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Article
  2. Neuromorphic Devices and Computing for Sensing, Memory, and Control.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
  3. Article
  4. TiONano convergence · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Hwiho Hwang *Division of Materials Science and Engineering and Department of Semiconductor Engineering, Hanyang University, Seoul, 04763, Korea.ORCID http://orcid.org/0009-0001-0559-0762
Sangwook Youn *Division of Materials Science and Engineering and Department of Semiconductor Engineering, Hanyang University, Seoul, 04763, Korea.
Hyungjin KimDivision of Materials Science and Engineering and Department of Semiconductor Engineering, Hanyang University, Seoul, 04763, Korea. hkim12@hanyang.ac.kr.ORCID http://orcid.org/0000-0002-4834-6882

Funding

Institute for Information and Communications Technology Promotion RS-2021-II212052, RS-2024-00506767Ministry of Science and ICT, South Korea RS-2023-00260527, RS-2025-07402970
6 · The paper itself

Abstract

Ferroelectric memories have undergone a transformative evolution from conventional perovskite-based materials to modern fluorite-structured ferroelectrics, driven by the pursuit of scalable, low-power, and CMOS-compatible non-volatile memory solutions. The observation of ferroelectricity in nanoscale HfO

Indexed as

Ferroelectric thin filmsHardware securityIn-memory computingNeuromorphic computingNon-volatile memory devices

Identifiers

PMID41196478
PMCPMC12592630

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.