Evidence map›Paper›PMID 41195566›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

High-Endurance STO:YSZ Optoelectronic Memristors with Vertically Aligned Nanocomposite Structure for Edge Detection.

Jiacheng Wang, Jikang Xu, Xu Han, Weidong Sun, Fu Wang, Zhen Zhao, Kangbo Zhao, Yufei Shang, Biao Yang, Hong Wang and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Jiacheng WangKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Jikang XuKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Xu HanKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Weidong SunKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Fu WangKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Zhen ZhaoKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Kangbo ZhaoKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Yufei ShangKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Biao YangKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Hong WangKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Haoning LiuKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.
Xiaobing YanKey Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding, 071002, P. R. China.ORCID https://orcid.org/0000-0002-3266-515X

Funding

Advanced Talents Incubation Program of the Hebei University 521000981363Advanced Talents Incubation Program of the Hebei University 521000981426Advanced Talents Incubation Program of the Hebei University 521100221071Advanced Talents Incubation Program of the Hebei University 521100224232Cultivation Projects of National Major R&D Project 92164109Disruptive Technology Innovation Project of the National Key R&D Program DT01202402075Graduate Innovation Funding Project of Hebei University HBU2025BS001Interdisciplinary Research Program of Natural Science DXK202101Key R&D Plan Projects 22311101DNational Key R&D Plan "Nano Frontier" Key Special Project 2021YFA1200502National Key R&D Plan "Nano Frontier" Key Special Project 2024YFA1208400National Key R&D Program Disruptive Technology Innovation Project 2024YFF1504300National Natural Science Foundation of China 61874158National Natural Science Foundation of China 62004056National Natural Science Foundation of China 62104058Outstanding Young Scientific Research and Innovation Team of Hebei University 605020521001Regional Innovation and Development Joint Fund U23A20365Scientific Research Project of Colleges and Universities in Hebei Province CYZD202503Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences XDB44000000-7Yanzhao Young Scientist Project F2023201076
6 · The paper itself

Abstract

Edge detection plays a critical role in cutting-edge domains such as real-time monitoring and automatic driving, with optoelectronic device-based real-time image processing garnering significant attention. However, the poor endurance and unstable optical responsivity of conventional optoelectronic memristors constrain their application in highly integrated edge detection systems. In this study, a silicon-based integrated optoelectronic memristor based on SrTiO

Indexed as

edge detectionoptical responseoptoelectronic memristorsynaptic behaviorVAN structure

Identifiers

PMID41195566
PMCPMC12767051

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.