Evidence map›Paper›PMID 41194385›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Stable, Step-Guided Growth of Planar Germanium Nanowires at 200 °C via the In-Plane Solid-Liquid-Solid Mechanism.

Junyang An, Zhiyan Hu, Shiqian Hu, Xiaopan Song, Junzhuan Wang, Linwei Yu

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Junyang AnSchool of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, 210023, China.
Zhiyan HuSchool of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, 210023, China.
Shiqian HuSchool of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, 210023, China.
Xiaopan SongSchool of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, 210023, China.
Junzhuan WangSchool of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, 210023, China.ORCID https://orcid.org/0000-0003-1851-220X
Linwei YuSchool of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, 210023, China.

Funding

China Postdoctoral Science Foundation 2025M770547China Postdoctoral Science Foundation 2025T180143Jiangsu Funding Program for Excellent Postdoctoral Talent 2024ZB427National Basic Research Program of China 2024YFA1208900National Key Research Program of China 92164201National Natural Science Foundation of China 62504103National Natural Science Foundation of China for Distinguished Young Scholars 62325403Natural Science Foundation of Jiangsu Province BK20251214
6 · The paper itself

Abstract

Germanium nanowires (GeNWs) are an ideal 1D platform for advanced nanoelectronics and optoelectronics, offering high carrier mobility, strong quantum confinement effects, and full compatibility with silicon-based complementary metal-oxide-semiconductor (CMOS) technology. However, achieving stable guided growth of planar GeNWs via the in-plane solid-liquid-solid (IPSLS) mechanism has remained challenging due to rapid intermixing between the catalytic droplet and the amorphous germanium (a-Ge) precursor. This study investigates the previously overlooked role of the absorption rate in stabilizing the interface between the indium (In) droplet and the a-Ge layer. A comprehensive analytical growth model elucidates the key dynamic processes governing mass transport and droplet stability during IPSLS growth. Systematic parametric studies identify a critical parameter window, enabling the guided growth of ultralong and uniform germanium nanowires with lengths exceeding 10 µm and diameters of ≈30 nm at a remarkably low growth temperature of 200 °C. These findings advance the understanding of the IPSLS growth mechanism and demonstrate precise control over GeNW morphology, opening new avenues for transformative applications in high-performance electronics, optoelectronics, and flexible sensing technologies.

Indexed as

germanium nanowiresguided growthin‐plane solid‐liquid‐solidlow temperature growth

Identifiers

PMID41194385
PMCPMC12850257

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.