Evidence map›Paper›PMID 41178460›Full record

ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Emerging 2D Ferroelectric Semiconductors: From Fundamentals to Advanced Device Applications.

Mengshuang Chi, Xiang Zhang, JiTao Liu, YiFan Wang, Aifang Yu, Di Guo, Junyi Zhai

Abstract readReview
PubMed Full text at PMC Publisher
In one paragraph

Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Emerging 2D Ferroelectric Semiconductors: From Fundamentals to Advanced Device Applications.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Mengshuang ChiBeijing Key Laboratory of Micro-Nano Energy and Sensor, Center for High-Entropy Energy and Systems, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China.
Xiang ZhangBeijing Key Laboratory of Micro-Nano Energy and Sensor, Center for High-Entropy Energy and Systems, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China.
JiTao LiuBeijing Key Laboratory of Micro-Nano Energy and Sensor, Center for High-Entropy Energy and Systems, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China.
YiFan WangBeijing Key Laboratory of Micro-Nano Energy and Sensor, Center for High-Entropy Energy and Systems, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China.
Aifang YuBeijing Key Laboratory of Micro-Nano Energy and Sensor, Center for High-Entropy Energy and Systems, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China.
Di GuoBeijing Key Laboratory of Micro-Nano Energy and Sensor, Center for High-Entropy Energy and Systems, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China.
Junyi ZhaiBeijing Key Laboratory of Micro-Nano Energy and Sensor, Center for High-Entropy Energy and Systems, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China.ORCID https://orcid.org/0000-0001-8900-4638

Funding

National Natural Science Foundation of China 52192611National Natural Science Foundation of China 52303307Postdoctoral Fellowship Program of China Postdoctoral Science Foundation GZB20230730
6 · The paper itself

Abstract

Two-dimensional (2D) ferroelectric semiconductors, as an emerging class of functional materials, attract considerable interest in nanoelectronics, spintronics, and optoelectronics, owing to their unique ability to combine ferroelectricity and semiconducting properties at the ultimate thickness limit. This review provides a comprehensive overview of the development, fundamental mechanisms, and recent advances of 2D ferroelectric semiconductors. The origins and unique characteristics of 2D ferroelectricity are discussed, and representative intrinsic 2D ferroelectric semiconductors as well as extrinsic systems are summarized. The potential applications of these materials in electronics, optoelectronics, spintronics, and valleytronics are discussed in detail. Finally, the key challenges facing the field are outlined, and perspectives on future directions are offered. This review aims to provide a systematic reference for both fundamental studies and technological development, fostering the advancement of 2D ferroelectric semiconductors toward high-performance and multifunctional device applications.

Indexed as

2D materialselectronicsferroelectric semiconductorsoptoelectronicspolarization mechanisms

Identifiers

PMID41178460
PMCPMC12713074

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.