Evidence map›Paper›PMID 41171378›Full record

ArticleNano convergence2025

First Demonstration of Hysteresis-Free IGZO/SnO-Based Complementary Circuits and SRAM with Long-Term Reliability Using SU-8 Passivation.

Changwoo Han, Hyeonjung Park, Yejoo Choi, Myeongjae Choi, Jaehyuk Lim, Huiseong Shin, Seungjoon Moon, Changhwan Shin

Abstract read
In one paragraph

Article in Nano convergence, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Changwoo HanSchool of Electrical Engineering, Korea University, Seoul, 02841, South Korea.
Hyeonjung ParkDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Yejoo ChoiSemiconductor R&D Center, Samsung Electronics, Hwaseong, 18448, South Korea.
Myeongjae ChoiDepartment of Semiconductor System Engineering, Korea University, Seoul, 02841, South Korea.
Jaehyuk LimResearch Institute of Semiconductor Technology, Korea University, Seoul, 02841, South Korea.
Huiseong ShinSchool of Electrical Engineering, Korea University, Seoul, 02841, South Korea.
Seungjoon MoonSemiconductor R&D Center, Samsung Electronics, Hwaseong, 18448, South Korea.
Changhwan ShinSchool of Electrical Engineering, Korea University, Seoul, 02841, South Korea. cshin@korea.ac.kr.ORCID http://orcid.org/0000-0001-6057-3773

Funding

Ministry of Trade, Industry and Energy 2410012306, 02305570, 25069-15FCNational Research Foundation of Korea RS-2023-00260527
6 · The paper itself

Abstract

Complementary logic and memory circuits based on n-type indium gallium zinc oxide (IGZO) and p-type tin monoxide (SnO) thin-film transistors (TFTs) were demonstrated with low-voltage, hysteresis-free operation. Optimization of IGZO channel thickness precisely tuned the inverter switching point to near V

Indexed as

Indium gallium zinc oxide (IGZO)InverterOxide semiconductorRing oscillator (RO)Static random-access memory (SRAM)Thin-film transistor (TFT)Tin monoxide (SnO)

Identifiers

PMID41171378
PMCPMC12579047

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.