Evidence map›Paper›PMID 41160262›Full record

ArticleNano convergence2025

Interfacial engineering with chemical bath deposition for high-performance HgTe quantum dot-based short-wave infrared photodetectors.

Haoran Chen, Yuwei Guo, Yulia V Kuznetsova, Kseniia A Sergeeva, Arsenii S Portniagin, Xie He, Hui Yu, Andrey L Rogach, Ni Zhao

Abstract read
In one paragraph

Article in Nano convergence, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Haoran ChenDepartment of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, Shatin, New Territories, People's Republic of China.
Yuwei GuoDepartment of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, Shatin, New Territories, People's Republic of China. yuweiguo@cuhk.edu.hk.
Yulia V KuznetsovaDepartment of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, 999077, Hong Kong SAR, People's Republic of China.
Kseniia A SergeevaDepartment of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, 999077, Hong Kong SAR, People's Republic of China.
Arsenii S PortniaginDepartment of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, 999077, Hong Kong SAR, People's Republic of China.
Xie HeDepartment of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, Shatin, New Territories, People's Republic of China.
Hui YuDepartment of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, Shatin, New Territories, People's Republic of China.
Andrey L RogachDepartment of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, 999077, Hong Kong SAR, People's Republic of China.
Ni ZhaoDepartment of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, Shatin, New Territories, People's Republic of China. nzhao@ee.cuhk.edu.hk.ORCID http://orcid.org/0000-0002-1536-8516

Funding

Guangdong Provincial Department of Science and Technology "1+1+1" CUHK-CUHK(SZ)-GDST Joint Collaboration FundInnovation and Technology Commission - Hong Kong ITS/027/22MX
6 · The paper itself

Abstract

Colloidal quantum dot-based short-wave infrared (SWIR) photodetectors are often limited by surface traps and high noise levels at room temperature. In this work, we present a low-temperature chemical bath deposition (CBD) strategy to grow a heterojunction passivation layer on HgTe quantum dot (QD) photoactive layers, enabling high-performance SWIR photodetection at room temperature. The CBD process achieves interfacial modification through a dual mechanism: sulfur ions penetrate the HgTe QD surface to form an Hg-S bonded interfacial region while simultaneously reacting with Cd

Indexed as

CdS layerChemical bath depositionHgTe quantum dotsInterfacial engineeringShort-wave infrared phototransistor

Identifiers

PMID41160262
PMCPMC12572506

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.