Evidence map›Paper›PMID 41157518›Full record

ArticleSensors (Basel, Switzerland)2025

A Reconfigurable Memristor-Based Computing-in-Memory Circuit for Content-Addressable Memory in Sensor Systems.

Hao Hu, Yian Liu, Shuang Liu, Junjie Wang, Siyu Xiao, Shiqin Yan, Ruicheng Pan, Yang Wang, Xingyu Liao, Tianhao Mao and 3 more

Abstract read
In one paragraph

Article in Sensors (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Hao HuState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0009-0003-7386-8054
Yian LiuState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0000-0003-0123-3343
Shuang LiuState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0000-0002-0587-4415
Junjie WangState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0000-0001-7183-422X
Siyu XiaoState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0009-0006-3095-3242
Shiqin YanState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0009-0005-8638-2509
Ruicheng PanState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0009-0004-8216-7097
Yang WangState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0009-0004-2130-1766
Xingyu LiaoState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0009-0009-9779-5869
Tianhao MaoState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0009-0006-1898-1080
Yutong ChenState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0009-0009-8794-850X
Xiangzhan WangState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Yang LiuState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.ORCID 0000-0003-0615-7036

Funding

National Natural Science Foundation of China 62404033National Natural Science Foundation of China 62404034
6 · The paper itself

Abstract

To meet the demand for energy-efficient and high-performance computing in resource-limited sensor edge applications, this paper presents a reconfigurable memristor-based computing-in-memory circuit for Content-Addressable Memory (CAM). The scheme exploits the analog multi-level resistance characteristics of memristors to enable parallel multi-bit processing, overcoming the constraints of traditional binary computing and significantly improving storage density and computational efficiency. Furthermore, by employing dynamic adjustment of the mapping between input signals and reference voltages, the circuit supports dynamic switching between exact and approximate CAM modes, substantially enhancing functional flexibility. Experimental results demonstrate that the 32 × 36 memristor array based on a TiN/TiOx/HfO

Indexed as

approximate matchingcomputing-in-memorycontent-addressable memorymemristormulti-bit processing

Identifiers

PMID41157518
PMCPMC12567561

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.