ArticleMaterials (Basel, Switzerland)2025
Large Platform Growth Effect of Single-Crystal Diamond on the Regulation of Its Dielectric Properties and Stress for THz Applications.
Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
The single-crystal diamond (SCD) possessing both favorable dielectric properties and low stress is esteemed as the ideal material for terahertz windows. The intrinsic step-like growth pattern of SCD can easily lead to stress concentration and a decrease in dielectric performance. In this study, a "two-step method" was designed to optimize the growth mode of SCD. A novel large platform growth pattern has been achieved by controlling diamond seed crystal etching and the epitaxial layer growth process. The experimental results indicate that, compared with the traditional step-like growth model, the root mean square (RMS) roughness of as-prepared SCD reduced from 5 nanometers (step growth) to 0.4~1.0 nanometers (platform growth) within a 5 μm × 5 μm area. Furthermore, the growth step height difference diminished from 30 nm to 3~4 nm, thereby mitigating stress induced by steps to a mere 0.1976 GPa. Additionally, at frequencies ranging from 0.1 to 3 THz, the diamond windows exhibit lower refractive index, dielectric constant, and dielectric loss. Finally, large platform growth effectively reduces phenomena such as dislocation pile-up brought about by step growth, achieving low-damage ultra-precision machining of diamond windows measuring 1 mm in diameter.
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