ArticleMaterials (Basel, Switzerland)2025
The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices.
Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Phase-change memory (PCM) is a promising candidate for in-memory computation and neuromorphic computing due to its high endurance, low cycle-to-cycle variability, and low read noise. However, among other factors, its performance strongly depends on the post-lithography fabrication steps. This study examines the impact of reactive ion etching (RIE) on PCM device performance by evaluating different etching gas mixtures, CHF
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