Evidence map›Paper›PMID 41152221›Full record

ArticleNature communications2025

Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions.

Wenkai Zhu, Hui Wen, Shouguo Zhu, Qirui Cui, Shihong Xie, Meng Ye, Gaojie Zhang, Hao Wu, Xiaomin Zhang, Weihao Li and 7 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Wenkai Zhu *State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0001-6770-5548
Hui Wen *State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0009-0006-1574-7379
Shouguo Zhu *State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0009-0002-7997-4483
Qirui Cui *Department of Applied Physics, School of Engineering Sciences, KTH Royal Institute of Technology, AlbaNova University Center, Stockholm, Sweden.
Shihong XieState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Meng YeState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Gaojie ZhangCenter for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China.
Hao WuCenter for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China.
Xiaomin ZhangState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Weihao LiState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Yuqing HuangState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0003-4583-6365
Jing ZhangState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Lixia ZhaoSchool of Electrical and Electronic Engineering, Tiangong University, Tianjin, China.
Amalia PatanèSchool of Physics and Astronomy, University of Nottingham, Nottingham, UK.ORCID http://orcid.org/0000-0003-3015-9496
Haixin ChangCenter for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China. hxchang@hust.edu.cn.ORCID http://orcid.org/0000-0001-9621-4457
Lin-Wang WangState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0001-7061-2692
Kaiyou WangState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. kywang@semi.ac.cn.ORCID http://orcid.org/0000-0002-6017-7575

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions provide an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects, due to the versatile band structure of semiconductors and high quality of their interfaces. In all-vdW magnetic tunnel junction (MTJ) devices, both the magnitude and sign of TMR can be tuned by an applied voltage. Typically, as the bias voltage increases, the amplitude of TMR initially decreases, followed by a reversal and/or oscillation in its sign. Herein, we report on an unconventional bias-dependent TMR observed in all-vdW Fe

Identifiers

PMID41152221
PMCPMC12569170

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.