Evidence map›Paper›PMID 41144800›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Diverse Responses in Lattice Thermal Conductivity of n-Type/p-Type Wurtzite Semiconductors Driven by Asymmetric Electron-Phonon Interactions.

Jianshi Sun, Shouhang Li, Zhen Tong, Cheng Shao, Han Xie, Meng An, Chuang Zhang, Xiongfei Zhu, Chen Huang, Quanjie Wang and 2 more

Abstract read
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In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Jianshi SunInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai, 201620, China.ORCID https://orcid.org/0009-0007-6084-2161
Shouhang LiCentre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, Palaiseau, 91120, France.ORCID https://orcid.org/0000-0001-6287-8394
Zhen TongSchool of Advanced Energy, Sun Yat-Sen University, Shenzhen, 518107, China.
Cheng ShaoThermal Science Research Center, Shandong Institute of Advanced Technology, Jinan, Shandong, 250103, China.
Han XieSchool of Energy and Materials, Shanghai Polytechnic University, Shanghai, 201209, China.
Meng AnDepartment of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan.
Chuang ZhangInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai, 201620, China.
Xiongfei ZhuInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai, 201620, China.
Chen HuangInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai, 201620, China.
Quanjie WangSchool of Mechanical Engineering, Shandong Key Laboratory of CNC Machine Tool Functional Components, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, China.
Yucheng XiongInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai, 201620, China.
Xiangjun LiuInstitute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University, Shanghai, 201620, China.

Funding

Fundamental Research Funds for the Central Universities CUSF-DH-T-2024061National Natural Science Foundation of China 12304039National Natural Science Foundation of China 12374027National Natural Science Foundation of China 52150610495National Natural Science Foundation of China 52306102National Natural Science Foundation of China 52376063Natural Science Foundation of Shanghai Municipality 21TS1401500Natural Science Foundation of Shanghai Municipality 22YF1400100
6 · The paper itself

Abstract

Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of wurtzite semiconductors is crucial for the thermal management of electronic devices, and a unified physical understanding of this issue is highly desired. In this work, the lattice thermal conductivities of typical direct and indirect bandgap wurtzite semiconductors are predicted, accounting for EPI based on mode-level first-principles calculations. It is found that there exist diverse responses in the lattice thermal conductivity of n-type/p-type wurtzite semiconductors concerning charge carrier concentrations due to asymmetric EPIs. The EPI has a larger effect on the lattice thermal conductivity of p-type doping compared to n-type doping in the same wurtzite semiconductor. The stronger EPI in p-type doping is attributed to the relatively higher electron density of states caused by the p-orbital component. Furthermore, EPI has a stronger influence on the lattice thermal conductivity of n-type indirect bandgap wurtzite semiconductors than n-type direct bandgap wurtzite semiconductors. This is attributed to the relatively lower electron density of states in direct bandgap wurtzite semiconductors stemming from the s-orbital component.

Indexed as

electron‐phonon couplingfirst‐principles calculationslattice thermal conductivitywurtzite semiconductors

Identifiers

PMID41144800
PMCPMC12786365

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.