Evidence map›Paper›PMID 41079668›Full record

ReviewResearch (Washington, D.C.)2025

Advances of Emerging Memristors for In-Memory Computing Applications.

Qingxin Chen, Lin Lu, Jialin Meng, Mingsheng Xu, Tianyu Wang

Abstract readReview
In one paragraph

Review in Research (Washington, D.C.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Review
  2. Article
  3. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Qingxin ChenSchool of Integrated Circuits, Shandong University, Jinan 250100, China.
Lin LuSchool of Integrated Circuits, Shandong University, Jinan 250100, China.
Jialin MengSchool of Integrated Circuits, Shandong University, Jinan 250100, China.
Mingsheng XuSchool of Integrated Circuits, Shandong University, Jinan 250100, China.
Tianyu WangSchool of Integrated Circuits, Shandong University, Jinan 250100, China.ORCID https://orcid.org/0000-0001-8114-3481

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The memristor, as an emerging nonvolatile device, has garnered considerable attention due to its low power consumption, high density, and multifunctionality. This review summarizes recent advances in the application of memristors for logic gates, with a focus on key breakthroughs and challenges in material design, device performance, and logic circuit implementation. It covers a variety of material systems including 2-dimensional materials, perovskite materials, and optoelectronic materials, as well as novel structures such as array architectures and wearable textile memristors, evaluating their suitability for achieving stable and efficient logic operations. In addition, the review provides a comparative analysis of different implementation strategies for basic logic, optoelectronic logic, and combinational logic, offering an in-depth discussion of their respective characteristics and advantages. This review also emphasizes the application prospects of memristor logic gates in reconfigurable computing, neuromorphic computing, and in-memory computing architectures, providing a theoretical foundation and practical support for the development of high-density integration and efficient memristor logic circuits.

Identifiers

PMID41079668
PMCPMC12508526

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.