Evidence map›Paper›PMID 41074878›Full record

ArticleNano letters2025

Lateral Semiconductor-Free-Space Gate Transistors.

Glen Isaac Maciel García, Vishal Khandelwal, Ganesh Mainali, Víctor Dorantes Paulín, Biplab Sarkar, Xiaohang Li

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nano letters, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Glen Isaac Maciel GarcíaApplied Physics Program, Physical Sciences and Engineering (PSE) Division, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia.ORCID 0000-0002-2574-0545
Vishal KhandelwalApplied Physics Program, Physical Sciences and Engineering (PSE) Division, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia.
Ganesh MainaliElectrical & Computer Engineering Department, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia.
Víctor Dorantes PaulínElectrical & Computer Engineering Department, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia.
Biplab SarkarDepartment of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Uttarakhand 247667, India.
Xiaohang LiApplied Physics Program, Physical Sciences and Engineering (PSE) Division, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia.ORCID 0000-0002-4434-365X

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

We introduce a novel lateral transistor architecture, the semiconductor-free-space gate transistor (SFGT), in which the conventional solid dielectric is replaced by a semiconductor-free-space gate configuration with sub-100 nm fin channels and dual side gates. This work presents the first demonstration of free-space gating in wide and ultrawide bandgap semiconductors, achieving performance on par with oxide-gated transistors. SFGTs fabricated using β-Ga

Indexed as

breakdown voltagefield-effect transistorfree-space dielectricnanochannelβ-Ga2O3

Identifiers

PMID41074878
PMCPMC12576820

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.