Evidence map›Paper›PMID 41059383›Full record

ArticleIEEE transactions on electron devices2025

Modeling of Conduction Mechanism in Filament-free Multi-layer Bulk RRAM.

Yucheng Zhou, Ashwani Kumar, Jaeseoung Park, Yuyi Zhang, Yue Zhou, Seonghyun Kim, Ertugrul Cubukcu, Duygu Kuzum

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in IEEE transactions on electron devices, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. A Study on the Synaptic Behavior of Al/ZrOACS applied materials & interfaces · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Yucheng ZhouDepartment of Electrical and Computer Engineering, University of California at San Diego, San Diego, CA 92093 USA.
Ashwani KumarDepartment of Electrical and Computer Engineering, University of California at San Diego, San Diego, CA 92093 USA.
Jaeseoung ParkDepartment of Electrical and Computer Engineering, University of California at San Diego, San Diego, CA 92093 USA.
Yuyi ZhangDepartment of Electrical and Computer Engineering, University of California at San Diego, San Diego, CA 92093 USA.
Yue ZhouDepartment of Electrical and Computer Engineering, University of California at San Diego, San Diego, CA 92093 USA.
Seonghyun KimR&D Division, SK Hynix Inc., Incheonsi, Gyeonggi-do, Republic of Korea.
Ertugrul CubukcuDepartment of NanoEngineering, University of California at San Diego, San Diego, CA 92093 USA.
Duygu KuzumDepartment of Electrical and Computer Engineering, University of California at San Diego, San Diego, CA 92093 USA.

Funding

E-Organoids: Functional Brain Organoids Co-grafted with Transparent MicrothreadsDP2EB030992 · NIBIB · UNIVERSITY OF CALIFORNIA, SAN DIEGO · PI KUZUM, DUYGU · 2020 to 2020
$2.4M
An Ultra High-Density Virtual Array with Nonlinear Processing of Multimodal Neural RecordingsR21EY029466 · NEI · UNIVERSITY OF CALIFORNIA, SAN DIEGO · PI KUZUM, DUYGU · 2018 to 2019
$455k
Multimodal Probing of Neural Activity Using Transparent Microelectrode ArraysR21EB026180 · NIBIB · UNIVERSITY OF CALIFORNIA, SAN DIEGO · PI KUZUM, DUYGU · 2018 to 2019
$433k
NEI NIH HHS R21 EY029466NIBIB NIH HHS DP2 EB030992NIBIB NIH HHS R21 EB026180
6 · The paper itself

Abstract

Filament-free bulk RRAM (resistive-switching random access memory) devices have been proposed to offer multi-level conductance states with less variations and noise and forming-free operation for neuromorphic computing applications. Understanding conduction mechanism and switching dynamics of filament-free bulk RRAM devices is crucial to optimize device characteristics and to build large-scale arrays for compute in memory and neuromorphic computing applications. Here, we first analyze switching characteristics of bulk RRAM by temperature dependent I-V measurements. We then present a quantitative physical model describing the conduction across trilayer stack by a series combination of multiple conduction mechanisms across each layer. Using this model and fitting it to the experimental characteristics of filament-free bulk RRAM devices, we investigate the origin of bulk switching in trilayer stacks. We demonstrate that our model can be used as a guide to design bulk switching RRAM devices from multilayer stacks of metal oxides.

Indexed as

bulk RRAMcompute in memoryconduction mechanismfilament-free switchingNeuromorphic computingTiOx

Identifiers

PMID41059383
PMCPMC12499816

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.