Evidence map›Paper›PMID 41058032›Full record

ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Phase-Change Materials for Volatile Threshold Resistive Switching and Neuronal Device Applications.

Huandong Chen, Jayakanth Ravichandran

Abstract readReview
PubMed Full text at PMC Publisher
In one paragraph

Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

2 authors.

Huandong ChenMork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA.ORCID https://orcid.org/0000-0001-9371-4237
Jayakanth RavichandranMork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA.ORCID https://orcid.org/0000-0001-5030-9143

Funding

ARO grant W911NF-19-1-0137ARO MURI W911NF-21-1-0327National Science Foundation DMR-2122071
6 · The paper itself

Abstract

Volatile threshold resistive switching and neuronal oscillations in phase-change materials, specifically those undergoing 'metal-to-insulator' transitions, offer unique attributes such as fast and low-field volatile switching, tunability, and stochastic dynamics. These characteristics are particularly promising for emulating neuronal behaviors and solving complex computational problems. In this review, we summarize recent advances in the development of volatile resistive switching devices and neuronal oscillators based on three representative materials with coincident electronic and structural phase transitions, at different levels of technological readiness: the well-studied correlated oxide VO

Indexed as

charge‐density‐wavecorrelated materialsmetal‐to‐insulator transitionneuronal functionalitiesphase‐change materialsvolatile switching

Identifiers

PMID41058032
PMCPMC12622517

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.