Evidence map›Paper›PMID 41057980›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Enabling Robust N-Type Perovskite Field-Effect Transistors Through an TiO

Jiangnan Xia, Xincan Qiu, Ping-An Chen, Yu Liu, Jiaqi Ding, Yu Zhang, Huan Wei, Zhenqi Gong, Chengyuan Peng, Wenpei Shi and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Enabling Robust N-Type Perovskite Field-Effect Transistors Through an TiOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Jiangnan XiaInternational Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
Xincan QiuKey Laboratory of Hunan Province for 3D Scene Visualization and Intelligence Education, School of Electronic Information, Hunan First Normal University, Changsha, 410205, China.
Ping-An ChenInternational Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
Yu LiuKey Laboratory of Hunan Province for 3D Scene Visualization and Intelligence Education, School of Electronic Information, Hunan First Normal University, Changsha, 410205, China.
Jiaqi DingKey Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
Yu ZhangInternational Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
Huan WeiKey Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
Zhenqi GongInternational Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
Chengyuan PengInternational Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
Wenpei ShiInternational Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
Shuanglong WangDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China.
Chen ChenScience and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China.
Yuanyuan HuInternational Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.ORCID https://orcid.org/0000-0001-8511-1401

Funding

111 Center B25033National Key Laboratory of Science, Technology on Advanced Composites in Special Environments, HIT 6142907240402National Key Research and Development Program 2022YFB3603802National Natural Science Foundation of China 62222403National Natural Science Foundation of China U21A20497Scientific Research Fund of Hunan Provincial Education Department 23B0842
6 · The paper itself

Abstract

Metal halide perovskites (MHPs) show tremendous potential for field-effect transistors (FETs), but N-type Pbbased MHP FETs have been hindered by critical challenges, including high defect densities, ion migration, and poor reproducibility. In this work, a simple yet powerful ultrathin TiO

Indexed as

dion‐jacobson (DJ) phase perovskitefield‐effect transistormetal halide perovskitesphotodetectorTiO2 interlayer

Identifiers

PMID41057980
PMCPMC12752618

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.