In one paragraphArticle in ACS applied materials & interfaces, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
2 · The registryThe trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
3 · Its place in the literatureWho cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
4 · The recordCorrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
5 · Who and what moneyAuthors and funding
15 authors.
Philipp SchreyerAdvanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.ORCID 0000-0002-7200-3855 Nico KaiserAdvanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.ORCID 0000-0002-5644-890X Déspina NasiouAdvanced Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.
Eszter PirosAdvanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.ORCID 0000-0001-8714-9059 Yu DuanAdvanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.
Taewook KimAdvanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.ORCID 0000-0002-3095-0053 Yingxin LiAdvanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.ORCID 0009-0002-1134-1794 Li-Chung ShihDepartment of Material Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.ORCID 0000-0003-1582-0426 Robert WinklerAdvanced Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.
Fernando L AguirreIntrinsic Semiconductor Technologies Ltd., 9th Floor 107 Cheapside, London EC2V 6DN, United Kingdom.ORCID 0000-0001-7793-1194 Tobias VogelAdvanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.ORCID 0000-0002-1519-0041 Alexey ArzumanovAdvanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.
Jen-Sue ChenDepartment of Material Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.ORCID 0000-0002-5973-8670 Leopoldo Molina-LunaAdvanced Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.ORCID 0000-0002-9412-8093 Lambert AlffAdvanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Peter-Grünberg-Str. 2, 64287 Darmstadt, Germany.ORCID 0000-0001-8185-4275 Funding
No grant is acknowledged in the PubMed record.
6 · The paper itselfAbstract
Resistive random-access memory based on hafnia is a potential candidate for next-generation memories. However, there are some key challenges to overcome, including the stochastic nature of the filament formation during electroforming and SET operation, which results in large cycle-to-cycle and device-to-device variability. Here, we propose a device setup with an artificial virtual electrode layer of conducting oxygen-deficient HfO
Indexed as
forming voltagehafnium oxideoxygen-deficientoxygen vacancyresistive switchingSET voltage stochasticity
Identifiers
PMID41046465
PMCPMC12532084
What OpenQuestion holds
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