Evidence map›Paper›PMID 41044085›Full record

ArticleNature communications2025

Tellurium-assisted growth of large-scale atom-thin insulating amorphous carbon on insulating substrates.

Ya Deng, Zihao Wang, Zhili Hu, Ang Li, Xin Zhou, Zhaolong Chen, Xingli Wang, Jiawei Liu, Kongyang Yi, Dundong Yuan and 19 more

Abstract read
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

29 authors.

Ya Deng *School of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.
Zihao Wang *Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.ORCID http://orcid.org/0000-0003-2169-1456
Zhili Hu *State Key Laboratory of Mechanics and Control for Aerospace Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, China.ORCID http://orcid.org/0000-0001-8637-9952
Ang Li *School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0009-0002-5967-0626
Xin ZhouSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.ORCID http://orcid.org/0000-0002-6431-731X
Zhaolong ChenInstitute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.ORCID http://orcid.org/0000-0002-6172-5713
Xingli WangIRL 3288 CINTRA (CNRS-NTU-THALES), Nanyang Technological University, Singapore, Singapore.ORCID http://orcid.org/0000-0003-2411-7804
Jiawei LiuInstitute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.
Kongyang YiSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.ORCID http://orcid.org/0000-0002-1941-1032
Dundong YuanSEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, China.
Xiaowei Wangi-Lab, Institute of NanoTech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
Peikun ZhangState Key Laboratory of Mechanics and Control for Aerospace Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, China.
Chao ZhuSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.ORCID http://orcid.org/0000-0001-6383-3665
Xiaoxu ZhaoSchool of Materials Science and Engineering, Peking University, Beijing, China.ORCID http://orcid.org/0000-0001-9746-3770
Wei MaSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.
Yao WuSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.ORCID http://orcid.org/0009-0005-1423-7097
Ruihuan DuanSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.ORCID http://orcid.org/0000-0003-4999-9735
Qundong FuSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.ORCID http://orcid.org/0000-0003-3846-396X
Jiefu YangSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.
Xiuxian ZhouSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.
Mengyao CaoSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore.
Chao ZhuSEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, China.ORCID http://orcid.org/0000-0002-1589-855X
Beng Kang TayIRL 3288 CINTRA (CNRS-NTU-THALES), Nanyang Technological University, Singapore, Singapore.ORCID http://orcid.org/0000-0002-3776-3648
Jian ZhangNanofabrication Laboratory, National Center for Nanoscience and Technology, Technology, University of Chinese Academy of Sciences, Beijing, China.
Mickael Lucien PerrinTransport at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland.ORCID http://orcid.org/0000-0003-3172-889X
Wu ZhouSchool of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China. wuzhou@ucas.ac.cn.ORCID http://orcid.org/0000-0002-6803-1095
Zhuhua ZhangState Key Laboratory of Mechanics and Control for Aerospace Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, China. chuwazhang@nuaa.edu.cn.ORCID http://orcid.org/0000-0001-6406-0959
Kostya S NovoselovInstitute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore. kostya@nus.edu.sg.ORCID http://orcid.org/0000-0003-4972-5371
Zheng LiuSchool of Materials Science & Engineering, Nanyang Technological University, Singapore, Singapore. z.liu@ntu.edu.sg.ORCID http://orcid.org/0000-0002-8825-7198

Funding

Agency for Science, Technology and Research (A*STAR) MTC YIRG grant M23M7c0122.A*STAR | Singapore Institute of Manufacturing Technology (Singapore Institute of Manufacturing Technology - A STAR) M23M2b0056Ministry of Education - Singapore (MOE) MOE-T2EP50121-0001Ministry of Education - Singapore (MOE) MOE Tier 3 MOE2018-T3-1-002National Natural Science Foundation of China (National Science Foundation of China) 12261160367, 12225205, U2441272National Natural Science Foundation of China (National Science Foundation of China) 12274067National Natural Science Foundation of China (National Science Foundation of China) 52402044National Natural Science Foundation of China (National Science Foundation of China) 62371448National Research Foundation Singapore (National Research Foundation-Prime Minister's office, Republic of Singapore) EDUNC-33-18-279-V12National Research Foundation Singapore (National Research Foundation-Prime Minister's office, Republic of Singapore) FCP RD FCP-CNRS-RG-2022-022National Research Foundation Singapore (National Research Foundation-Prime Minister's office, Republic of Singapore) NRF-CRP22-2019-0007Shenzhen Science and Technology Innovation Commission CYJ20240813160206009, KQTD20221101115627004Suzhou Municipal Science and Technology Bureau (Bureau of Science and Technology of Suzhou Municipality) ZXL2023339, SJC2023004
6 · The paper itself

Abstract

Monolayer amorphous carbon (a-C), an atom-thin two-dimensional (2D) carbon amorphous material, has attracted significant attention due to its structural and transport properties. Here, we report a chemical vapor deposition (CVD) approach for directly synthesizing monolayer a-C films on insulating substrates, achieving high control over their size, thickness, and fabrication. The synthesized films exhibit a complete coverage over a 2-inch wafer, with high uniformity. Our theoretical analysis reveals the critical role of tellurium in promoting the growth of monolayer a-C on the substrate. Moreover, quantum tunneling measurements at liquid helium temperature were conducted on the a-C films, confirming the samples' homogeneity and their insulating behavior. This work provides a promising strategy for direct synthesis of atom-thin insulating amorphous materials and deepens our understanding of quantum phenomena and electronic properties in low-dimensional disordered materials.

Identifiers

PMID41044085
PMCPMC12494881

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.