Evidence map›Paper›PMID 41022722›Full record

ArticleMicrosystems & nanoengineering2025

Polarity control of 2D semiconductor for reconfigurable electronics.

Xiaoqian He, Kejie Guan, Fuqin Sun, Xiaoshuang Gou, Lin Liu, Yingyi Wang, Weifan Zhou, Yang Xia, Cheng Zhang, Hao Dai and 3 more

Abstract read
In one paragraph

Article in Microsystems & nanoengineering, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Ferroelectric Devices for In-Memory and In-Sensor Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Xiaoqian HeCollege of Sciences, Shanghai University, Shanghai, 200444, PR China.
Kejie Guani-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China.
Fuqin Suni-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China.
Xiaoshuang Goui-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China.
Lin Liui-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China.
Yingyi Wangi-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China.
Weifan Zhoui-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China.
Yang Xiai-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China.
Cheng Zhangi-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China.ORCID http://orcid.org/0000-0002-4134-2854
Hao Daii-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China.
Zhanxia ZhaoCollege of Sciences, Shanghai University, Shanghai, 200444, PR China. zhaozhanxia@shu.edu.cn.
Xiaowei Wangi-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China. xwwang2022@sinano.ac.cn.
Ting Zhangi-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China. tzhang2009@sinano.ac.cn.

Funding

Basic Research Program of Jiangsu Province SJC2023004China Postdoctoral Science Foundation 2023M742556Chinese Academy of Sciences (CAS) XDB0520301National Natural Science Foundation of China (National Science Foundation of China) 52270130National Natural Science Foundation of China (National Science Foundation of China) 62125112, U24A20228National Natural Science Foundation of China (National Science Foundation of China) 62204254National Natural Science Foundation of China (National Science Foundation of China) 62301553National Natural Science Foundation of China (National Science Foundation of China) 62371448National Natural Science Foundation of China (National Science Foundation of China) 62401563Natural Science Foundation of Jiangsu Province (Jiangsu Provincial Natural Science Foundation) BK20230234Natural Science Foundation of Jiangsu Province (Jiangsu Provincial Natural Science Foundation) BK20243004
6 · The paper itself

Abstract

The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices. Ambipolar two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and excellent gate modulation efficiency, have emerged as highly promising channel materials for such devices. However, existing methods for polarity control encounter challenges in achieving reversible modulation during device operation. Here, we report a novel strategy for reversibly modulating the polarity of ambipolar 2D semiconductors through gate-controlled charge trapping. We demonstrate a double-gate TaO

Identifiers

PMID41022722
PMCPMC12480568

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.