Evidence map›Paper›PMID 41017601›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001).

Xu Yang, Markus Pristovsek, Shugo Nitta, Yoshio Honda, Akihiro Ohtake, Yoshiki Sakuma, Takanobu Hiroto, Takayuki Ishida, Michio Ikezawa, Qixin Guo and 1 more

Abstract read
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In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Xu YangInstitute of Materials and Systems for Sustainability, Nagoya University, Nagoya, 464-8601, Japan.ORCID https://orcid.org/0000-0001-8195-5850
Markus PristovsekInstitute of Materials and Systems for Sustainability, Nagoya University, Nagoya, 464-8601, Japan.
Shugo NittaInstitute of Materials and Systems for Sustainability, Nagoya University, Nagoya, 464-8601, Japan.
Yoshio HondaInstitute of Materials and Systems for Sustainability, Nagoya University, Nagoya, 464-8601, Japan.
Akihiro OhtakeResearch Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
Yoshiki SakumaResearch Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
Takanobu HirotoResearch Network and Facility Service Division, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
Takayuki IshidaInstitute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki, 305-8571, Japan.
Michio IkezawaInstitute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki, 305-8571, Japan.
Qixin GuoDepartment of Electrical and Electronic Engineering, Saga University, Honjo-1, Saga, 840-8502, Japan.
Hiroshi AmanoInstitute of Materials and Systems for Sustainability, Nagoya University, Nagoya, 464-8601, Japan.

Funding

CIRFE Young Researchers Support ProjectJSPS KAKENHI JP23K03272JSPS KAKENHI JPJSJRP 20221603
6 · The paper itself

Abstract

The epitaxy of high-quality hexagonal boron nitride (hBN) multilayers on dielectric wafers is essential for hBN applications but remains challenging. Herein, highly-oriented hBN multilayers grown on single-crystal aluminum nitride (AlN)-AlN on sapphire and bulk AlN substrates-via metalorganic vapor phase epitaxy and high-temperature annealing is reported. Hexagonal AlN (0001) not only provides a crystallographically commensurate base for hBN epitaxy but is thermally stable for hBN annealing up to 1800 °C, enabling the first instance of large-area multilayer hBN with both superior out-of-plane and in-plane alignments grown directly on dielectrics using a fully industry-compatible approach. Elevated temperatures also reduce carbon and allow control over the separation of related single photon emission centers in hBN. These centers exhibit a record-narrow wavelength distribution (578 ± 5 nm) with small zero-phonon linewidths down to 1.44 meV, indicating the high uniformity of the achieved multilayer hBN films. This work paves an industry-compatible way toward producing highly-oriented homogeneous hBN multilayers on dielectrics, promising for future device and integration applications.

Indexed as

epitaxy and annealinghexagonal boron nitridehigh temperaturemultilayersingle‐crystal AlN

Identifiers

PMID41017601
PMCPMC12697885

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.