Development, Design, and Electrical Performance Simulation of Novel Through-Type 3D Semi Spherical Electrode Detector Based on SOI Substrate.

This article proposes a novel three-dimensional trench electrode detector, named the through-type three-dimensional quasi-hemispherical electrode detector. The detector adopts a trench structure to package each independent unit and achieves complete penetration of trench electrodes with the help of an SOI substrate. The horizontal distances from the center anode of the detector to the trench cathode and the detector thickness are equal. It has a near-spherical structure and exhibits spherical-like electrical performance. In this study, we modeled the device physics of the new structure and conducted a systematic three-dimensional simulation of its electrical characteristics, including the electric field, electric potential, electron concentration distribution of the detector, the inducted current caused by incident ions, and the crosstalk between detector units. Computational and technology computer-aided design (TCAD) simulation results show that the detector has an ultra-small capacitance (2.7 fF), low depletion voltage (1.4 V), and uniform electric field distribution. The trench electrodes electrically isolate the pixel units from each other so that the coherence effect between the units is small and can be applied in high-resolution X-ray photon counting detectors to enhance the contrast-to-noise ratio of low-dose imaging and the detection rate of tiny structures, among other things.