Material Removal on Hydrogen-Terminated Diamond Surface via AFM Tip-Based Local Anodic Oxidation.

Jinyan Tang, Zhong-Hao Cao, Zhongwei Li, Yuan-Liu Chen

Abstract read

In one paragraph

Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

Authors and funding

4 authors.

Jinyan TangThe State Key Lab of Fluid Power and Mechatronic Systems, Zhejiang University, Hangzhou 310058, China.

Zhong-Hao CaoThe State Key Lab of Fluid Power and Mechatronic Systems, Zhejiang University, Hangzhou 310058, China.

Zhongwei LiThe State Key Lab of Fluid Power and Mechatronic Systems, Zhejiang University, Hangzhou 310058, China.ORCID 0000-0003-2625-7122

Yuan-Liu ChenThe State Key Lab of Fluid Power and Mechatronic Systems, Zhejiang University, Hangzhou 310058, China.

Funding

National Key R&D Program of China 2022YFB3403302National Natural Science Foundation of China 52425505National Natural Science Foundation of China U22A20207Zhejiang Provincial Key R&D Program of China 2023C01056

6 · The paper itself

Abstract

Diamond is a promising next-generation semiconductor material, offering a wider band gap, higher electron mobility, and superior thermal conductivity compared with silicon. However, its exceptional hardness makes it challenging to fabricate. In this study, we demonstrate a novel approach to realize material removal on hydrogen-terminated diamond surfaces by atomic force microscope (AFM) tip-based local anodic oxidation. By adjusting both the applied voltage and hydrogen plasma etching parameters, the material is removed over an area larger than the AFM tip size. Notably, the hardness of the material surrounding the removal zone is significantly reduced, enabling it to be scratched with a silicon tip. These findings open a promising pathway for improving the machinability of diamonds in future device applications.

Indexed as

hydrogen-terminated diamondlocal anodic oxidationsemiconductor fabrication

Identifiers

PMID41011872

DOI10.3390/mi16090981

PMCPMC12471924

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