ArticleMaterials (Basel, Switzerland)2025
Controlling the Digital to Analog and Multilevel Switching in Memristors Based on Zr-Doped HfO
Article in Materials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Metal oxides are the most widely used material for the resistive switching layer of memristors. Nevertheless, the majority of oxide-based memristors exhibit binary switching, restricting the emulation of neuronal synaptic behaviors. In this paper, the shift from digital-to-analog switching behavior is achieved by inserting an Al
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