Evidence map›Paper›PMID 41006288›Full record

ArticleNature communications2025

Ultra-wide-field imaging Mueller matrix spectroscopic ellipsometry for semiconductor metrology.

Juntaek Oh, Jaehyeon Son, Changhyeong Yoon, Eunsoo Hwang, Jinwoo Ahn, Jaewon Lee, Jinsoo Lee, Jiyong Shin, Donggun Lee, Seunga Lim and 5 more

Abstract read
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Juntaek OhAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Jaehyeon SonAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Changhyeong YoonAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Eunsoo HwangAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Jinwoo AhnAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Jaewon LeeAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Jinsoo LeeAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Jiyong ShinAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Donggun LeeAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Seunga LimAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Jeongho AhnDRAM Process Development Team, Process Development Department, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Younghoon SohnMetrology and Inspection Team, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Sangjin HyunAdvanced Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Myungjun LeeAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.
Taeyong JoAdvanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea. ty.jo@samsung.com.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

We propose an ultra-wide-field imaging Mueller matrix spectroscopic ellipsometry (IMMSE) system for semiconductor metrology. The IMMSE system achieves large-area measurements with a 20 mm × 20 mm field of view (FOV)-the largest FOV reported to date-and a spatial resolution of 6.5 µm. It enables the acquisition of over 10 million Mueller matrix (MM) spectra within the FOV, while a unique signal correction algorithm ensures spectrum consistency across the FOV. Leveraging this numerous MM spectra and machine learning, spatially dense metrology across the entire wafer area is achieved. This approach provides over 1987 times more metrology data and 662 times higher throughput compared to conventional point-based methods, such as scanning electron microscopy. We experimentally demonstrate the potential of the IMMSE for yield enhancement in semiconductor manufacturing by identifying spatial variations of dynamic random access memory (DRAM) structures within individual chips as well as across the wafer.

Identifiers

PMID41006288
PMCPMC12475497

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.