ArticleNature communications2025
Evidence of air-induced surface transformation of atomic step-engineered sapphire in relation to epitaxial growth of 2D semiconductors.
Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
2 citing papers in PubMed.
- Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors.Nature communications · 2026Article
- MOCVD-Grown MoSAdvanced materials (Deerfield Beach, Fla.) · 2026Article
Corrections and comments
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Authors and funding
18 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Engineering sapphire substrates with specific surface characteristics is crucial for the epitaxial growth of high-quality wafer-scale transition metal dichalcogenides, essential for integration with semiconductor industry processes. Here, we report that atomic-step-engineered sapphire surfaces undergo structural and chemical changes upon air exposure, which may be associated with surface hydrolysis and the formation of aluminum (oxy)hydroxides as revealed by a self-developed charge-contrast enhanced X-ray photoelectron spectroscopy technique. We suggest these species transform into oxygen-deficient Al
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Registered trials
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