Epitaxial Growth Control of Crystalline Morphology and Electronic Transport in InSb Nanowires: Competition Between Axial and Radial Growth Modes.

Jiebin Zhong, Jian Lin, Miroslav Penchev, Mihrimah Ozkan, Cengiz S Ozkan

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Jiebin ZhongAixtron Corporation, Santa Clara, CA 95054, USA.

Jian LinDepartment of Mechanical and Aerospace Engineering, University of Missouri, Columbia, MO 65211, USA.

Miroslav PenchevCenter for Environmental Research and Technology, University of California, Riverside, CA 92521, USA.ORCID 0000-0002-1251-4733

Mihrimah OzkanElectrical and Computer Engineering Department, University of California, Riverside, CA 92521, USA.ORCID 0000-0002-6224-5703

Cengiz S OzkanMechanical Engineering Department, University of California, Riverside, CA 92521, USA.ORCID 0000-0001-6751-6851

Funding

International Chemical Systems 012036-002MARCO FENA A003571404STARNET CSPIN HR0011-13-3-0002

6 · The paper itself

Abstract

This study investigates the morphological evolution of epitaxial indium antimonide (InSb) nanowires (NWs) grown via chemical vapor deposition (CVD). We systematically explored the influence of key growth parameters-temperature (300 °C to 480 °C), source material composition, gold (Au) nanoparticle catalyst size, and growth duration-on the resulting NW morphology, specifically focusing on NW length and tapering. Our findings reveal that the competition between axial and radial growth modes, which are governed by different growth mechanisms, dictates the final nanowire shape. An optimal growth condition was identified that yields straight and minimally tapered InSb NWs. High-resolution transmission electron microscopy (TEM) confirmed that these nanowires grow preferentially along the <110> direction, and electrical characterization via field-effect transistor (NW-FET) measurements showed that they are n-type semiconductors.

Indexed as

chemical vapor depositionepitaxyFETHRTEMIII-V semiconductorsInSb nanowires

Identifiers

PMID41003069

DOI10.3390/nano15181436

PMCPMC12472931

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.