ArticleScientific reports2025
Fabrication and dimensional scaling of SiNW-FET array via AFM-LAO lithography and self-limiting oxidation.
Article in Scientific reports, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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1 citing paper in PubMed.
- Advancing nanolithography: a comprehensive review of materials for local anodic oxidation with AFM.Beilstein journal of nanotechnology · 2026Review
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3 authors.
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Abstract
Silicon nanowires (SiNWs) have emerged as promising candidates for advanced transistor applications due to their exceptional electronic properties, compatibility with standard semiconductor fabrication processes, and scalability toward miniaturized device architectures. In this study, we present a fabrication technique for SiNW-based device using atomic force microscope (AFM) lithography via the local anodic oxidation (LAO) process. To further refine the dimensions of the fabricated SiNWs, a self-limiting oxidation (SLO) process was employed as a post-patterning treatment. This combined approach addresses the limitations of conventional AFM-LAO by enabling dimensional scaling while improving nanowire uniformity and surface quality. The effects of oxidation temperature and the number of SLO cycles were systematically investigated to assess their influence on nanowire morphology and electrical performance. Results demonstrated that the most significant dimensional reduction occurred at 1000 °C after three SLO cycles. Electrical characterization through I-V measurements revealed a reduction in drain-source current (I
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