Evidence map›Paper›PMID 40985329›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025

Wafer-Scale Manufacturing and Crack-Free Transferring of GaN-Based Membranes for Flexible Optoelectronics.

Yaqi Gao, Kaixuan Zhou, Zhetong Liu, Lulu Wang, Yiwei Duo, Shenyuan Yang, Jiankun Yang, Xiang Gao, Wenze Wei, Junxi Wang and 5 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Yaqi GaoResearch and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Kaixuan ZhouCollege of Energy, Soochow Institute for Energy and Materials Innovations, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, China.
Zhetong LiuBeijing Graphene Institute (BGI), Beijing, 100095, China.
Lulu WangResearch and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Yiwei DuoResearch and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Shenyuan YangCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Jiankun YangResearch and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Xiang GaoCollege of Energy, Soochow Institute for Energy and Materials Innovations, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, China.
Wenze WeiCollege of Energy, Soochow Institute for Energy and Materials Innovations, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, China.
Junxi WangResearch and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Peng GaoBeijing Graphene Institute (BGI), Beijing, 100095, China.
Jinmin LiResearch and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Zhongfan LiuBeijing Graphene Institute (BGI), Beijing, 100095, China.
Jingyu SunCollege of Energy, Soochow Institute for Energy and Materials Innovations, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, China.
Tongbo WeiResearch and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.ORCID https://orcid.org/0000-0002-1479-082X

Funding

GuangDong Basic and Applied Basic Research Foundation 2022B1515120081National Key R&D Program of China 2019YFA0708201National Key R&D Program of China 2019YFA0708203National Natural Science Foundation of China 52192614National Natural Science Foundation of China 62135013National Natural Science Foundation of China 62175228National Natural Science Foundation of China 62234001
6 · The paper itself

Abstract

Heterogeneously integrated devices have great demand for the freestanding wafer-level wide bandgap semiconductors in their single crystal membrane form. However, the current fabrication strategy is quite costly and low throughput. Here, quasi van der Waals epitaxy (QvdWE) of nearly single crystalline GaN membranes on Si(100) substrate via directly-grown graphene interfacial layers are demonstrated. Through simple chemical etching, wafer-scale III-nitride membranes can be readily realized and transferred onto arbitrary substrates, with minimized damage and wafer-scale peeling capability. The obtained flexible InGaN-based light emitting diode device demonstrates strong blue luminescence due to avoiding the crack during transfer process. Meanwhile, flexible ultraviolet photodetector also shows good stability, delivering high responsivity and specific detectivity of 3.52×10

Indexed as

flexible LEDsflexible PDsGaNgrapheneSi(100)

Identifiers

PMID40985329
PMCPMC12697778

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.