ArticleSensors (Basel, Switzerland)2025
Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors.
Article in Sensors (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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Who cites it
1 citing paper in PubMed.
- Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures.Sensors (Basel, Switzerland) · 2026Article
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8 authors.
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Abstract
We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room temperature. Their architecture enables straightforward scaling to two-dimensional formats, paving the way for terahertz focal plane arrays (FPAs). In particular, for one detector type, a fully realized THz FPA has been demonstrated in this paper. Theoretical and experimental characterizations are provided for both single-pixel detectors (0.1-1.5 THz) and the FPA (0.1-1.1 THz). The broadband single detectors achieve optical sensitivities exceeding 20 mA/W up to 1 THz and NEP values below 100 pW/Hz. The best optical NEP is below 10 pW/Hz at 175 GHz. The reported sensitivity and NEP values were achieved including antenna and optical coupling losses, underlining the excellent overall performance of the detectors.
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