ArticleSensors (Basel, Switzerland)2025
Investigating the Impact of Sensor Layout on Radiation Hardness in 25 µm Pitch Hybrid Pixel Detectors for 4th Generation Synchrotron Light Sources.
Article in Sensors (Basel, Switzerland), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
With the evolution of synchrotron light sources to fourth generation (diffraction-limited storage rings), the brilliance is increased by several orders of magnitude compared to third generation facilities. For example, the Swiss Light Source (SLS) has been upgraded to SLS 2.0, promising a horizontal emittance reduced by a factor of 40, and a brilliance up to two orders of magnitude (three at higher energies). A key challenge arising from the increased flux is the heightened accumulated dose in silicon sensors, which leads to a significant increase in radiation damage. This translates into an increase of both noise and dark current, as well as a reduction in the dynamic range for long exposure times, thus affecting the performance of the detector, in particular, for charge-integrating detectors. We have designed sensors with a 4 × 4 mm
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