ArticleSmall (Weinheim an der Bergstrasse, Germany)2025
DFT-Assisted Approach to Low-Temperature Graphene Growth on Sapphire.
Article in Small (Weinheim an der Bergstrasse, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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Who cites it
2 citing papers in PubMed.
- Optimizing the Graphene/α-AlACS applied nano materials · 2025Article
- DFT-Assisted Approach to Low-Temperature Graphene Growth on Sapphire.Small (Weinheim an der Bergstrasse, Germany) · 2025Article
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Authors and funding
11 authors.
Funding
Abstract
Controlling the direct growth of 2D materials onto dielectric substrates is considered as a key requirement for integrating these ultrathin functional materials into existing technology platforms. Here, a combined experimental and theoretical approach is presented to unravel the mechanism of low-temperature graphene growth on sapphire, a dielectric substrate widely used in the semiconductor industry. A clear dependence of the graphene growth rate on the crystal facet is found, with the highest growth rate for a-plane and ca-plane, and the lowest for r-plane sapphire. Density functional theory calculations reveal that the coordination environment of surface oxygen ions governs carbon adsorption energetics: lower coordinated oxygen sites on the a-plane markedly enhance carbon atom binding, driving nucleation and growth, while higher coordinated oxygen sites on the r-plane hinder adsorption and growth. Guided by these insights, it is demonstrated that tailoring substrate termination yields controllable graphene formation at temperatures as low as 670 °C and sheet resistances down to 1.65 kΩ □
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