ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2025
Strategic Mobility Engineering in 2D Semiconductor-based FETs for Enhanced Electronic Devices.
Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
3 citing papers in PubMed.
- Highly Stable and Non-Volatile Optoelectronic Synapses for Sensing, Memory, and Computing Enabled by a Deep-Potential Floating Gate.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Organic semiconductor materials for neuromorphic and bioelectronic systems design rules and applications.iScience · 2026Review
- Strategic Mobility Engineering in 2D Semiconductor-based FETs for Enhanced Electronic Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
14 authors.
Funding
Abstract
As silicon-based electronics approach the physical limits of Moore's Law, 2-Dimensional (2D) semiconductors emerge as promising candidates for next-generation electronic devices due to their atomic-scale thickness and inherently high carrier mobilities. These materials offer superior electrostatic control, mitigating short-channel effects while enabling continued device scaling. However, challenges such as contact resistance and suboptimal channel properties continue to impede carrier transport, necessitating advanced mobility engineering strategies. This review comprehensively evaluates recent approaches to enhance carrier mobility in 2D semiconductor-based field-effect transistors (FETs), including doping, metal-semiconductor interface optimization, effective mass engineering, scattering mechanism manipulation, work function tuning, and strain engineering. These strategies improve critical device parameters like current drive, subthreshold swing, and on/off ratios by optimizing carrier transport efficiency. By linking material-level advancements to circuit-level performance, this work underscores the pivotal role of mobility engineering in enabling scalable, high-performance 2D electronics. These insights pave the way for transitioning 2D materials from laboratory research to practical applications, overcoming the limitations of conventional silicon technologies and driving innovations in high-performance, energy-efficient electronics.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.