ArticleACS applied materials & interfaces2025
Oligosaccharide Block Copolymers with Branched Architectures and Channel Energy Level Optimizations for High-Performance Floating Gate Phototransistor Memory.
Article in ACS applied materials & interfaces, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
The nonvolatile phototransistor memory features a fast transmission speed, low latency, and nondestructive orthogonal operation for multibit data storage. Utilizing perovskite quantum dots (QDs) with polymers has been regarded as a facile and efficient approach to fabricating phototransistor memory devices due to their high light responsivity and nonvolatility. In addition, introducing block copolymers improves the QD dispersion and ambient stability. However, the reported study has not investigated the branching architectures of block copolymers (BCPs) influencing memory behavior and the tunability between the channel and the floating gate memory layer. Herein, this study utilizes different numbers of branching arms of carbohydrate-based BCPs, comprising poly(dimethylsiloxane) (PDMS, as A block) and maltotriose (MT, as B block), to promote electrical performance for phototransistor memory. Different rylenediimide-based N-type semiconductors are combined with BCP/QD floating gate dielectrics according to their energy levels. Due to the most substantial QD accommodation conferred by BCPs, the triarms BCP with QD (
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